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Insights into the Silicon Carbide (SiC) Product Application Industry (Part 1)

SiC Market Overview and Growth Drivers
The global silicon carbide (SiC) market is experiencing a phase of rapid growth. According to the "Power SiC 2025" market report released by Yole Group, the global SiC power device market is expected to exceed $10.3 billion by 2030, with a compound annual growth rate (CAGR) of 20.3% from 2024 to 2030. This growth is primarily driven by the dual forces of the new energy revolution and digital transformation, particularly against the backdrop of global carbon neutrality commitments and the rapid advancement of artificial intelligence technologies.

The Chinese market has demonstrated particularly strong performance. Data from CASA shows that in 2024, the market size of silicon carbide and gallium nitride semiconductor power devices in China reached 17.6 billion yuan, a year-on-year increase of 14.8%. Among these, the new energy vehicle market contributed over 12 billion yuan, making it the largest growth driver. With the widespread adoption of 800V high-voltage platform vehicles, the penetration rate of SiC power modules in main drive inverters continues to rise. The large-scale application by numerous automakers has further stimulated market demand.

The growth of the SiC market is primarily driven by the following factors:

• Energy Transition Demand: Global carbon neutrality commitments are accelerating the development of electric vehicles, renewable energy power generation, and energy storage systems, all of which require high-performance power devices. SiC devices significantly improve energy conversion efficiency, reduce energy loss, and align with the requirements of green and low-carbon development.

• Technological Advancements and Cost Reduction: SiC manufacturing processes are maturing, with wafer sizes transitioning from 6 inches to 8 inches. In 2025, 6-inch SiC wafers remain the mainstay of shipments, with the average unit price declining by over 30% annually due to price competition. Cost reduction has further promoted the widespread application of SiC devices.

• Policy Support: China's "Two New and One Heavy" initiative (new infrastructure, new urbanization) and "Dual Carbon" strategy continue to empower the compound semiconductor industry. A series of government policies have accelerated the localization of semiconductor equipment, providing a favorable development environment for domestic enterprises.

• Emerging Application Scenarios: Beyond traditional power device applications, demand for SiC in AI server power supplies, humanoid robot joint drives, ultra-fast charging networks, radio frequency, and optoelectronics is booming. Emerging application scenarios are providing new growth opportunities for the SiC market.

Key Technological Breakthroughs and Innovation Trends
SiC technology has made significant progress in recent years, providing strong momentum for industrial development. These breakthroughs cover multiple aspects, including material preparation, device design, and application innovation.

Material Preparation Technology
In terms of material preparation, China's SiC industry has achieved significant breakthroughs. In 2024, domestic silicon carbide substrate production capacity surged, with the yield of 6-inch substrates continuously improving, 8-inch substrates entering mass production, and 12-inch substrates successfully developed. This marks China's silicon carbide substrate technology as among the global top tier. Large-size wafers have become a key path to reducing costs and improving efficiency. Although the 6-inch platform remains the core of current mass production, 8-inch technology is being rapidly adopted.

Crystal growth technology is a core segment of SiC production. Companies like Geqi Compound Semiconductor focus on four core technologies: raw material property control, seed crystal adhesion accuracy, thermal field parameter design, and module structural stability. Through systematic optimization, they have effectively controlled crystal defect density and stress variation, achieving international first-tier levels in wafer conductivity stability and yield.

Table: Comparison of Characteristics of Different Sizes of SiC Wafers

Device Design and Innovation
In terms of device design, the 1700V silicon carbide MOSFET series, as a new industry product, features high voltage, high efficiency, and high reliability. Compared to traditional silicon materials, silicon carbide has a wider bandgap (approximately 3.26 eV), making it excel in extreme conditions such as high temperature, high pressure, and high frequency.

Key technological innovations include:

• Low On-Resistance: The low on-resistance (Rds(on)) of the 1700V silicon carbide MOSFET means less energy loss during switching, thereby improving the overall system's energy efficiency.

• Thermal Management Capability: Silicon carbide MOSFETs can withstand higher operating temperatures than silicon MOSFETs, with operating temperatures reaching 175°C or even higher. This capability allows the 1700V silicon carbide MOSFET to operate stably for extended periods in harsh environments, reducing cooling requirements and system complexity.

• Switching Speed: The 1700V silicon carbide MOSFET also features faster switching speeds. Due to its lower charge storage effect, it can achieve rapid on/off switching, reducing switching losses.

Packaging Technology Innovations
In terms of packaging technology, modular design has become a breakthrough. Compared to discrete devices, modules can integrate more functions, reduce peripheral devices, and offer a more compact layout, improving heat dissipation and isolation performance. For example, the HSDIP20 module launched by ROHM integrates 4 or 6 SiC MOSFETs in a full-bridge circuit, offering higher integration and better thermal management capabilities than discrete solutions.

Emerging application fields are also driving innovation in packaging technology. TSMC is calling on equipment manufacturers and compound semiconductor-related suppliers to participate in plans to apply 12-inch single-crystal silicon carbide to heat dissipation substrates, replacing traditional alumina, sapphire substrates, or ceramic substrates. This is because SiC's thermal conductivity (K-value) is second only to diamond. The thermal conductivity of ceramic substrates is about 200–230 W/mK, while silicon carbide can reach 400 W/mK, even接近 500W/mK.

In-Depth Analysis of Major Application Fields
New Energy Vehicle Field
New energy vehicles are the most important application field for SiC devices and the primary driver of SiC market growth. In 2024, China's new energy vehicle market contributed over 12 billion yuan, making it the largest growth driver for SiC power devices.

In electric vehicles, SiC devices are primarily used in key systems such as main drive inverters, onboard chargers (OBC), and DC-DC converters. With the widespread adoption of 800V high-voltage platform vehicles, the penetration rate of SiC power modules in main drive inverters continues to rise. The 800V architecture has become a significant catalyst, as the performance advantages of 1200V SiC over IGBT become more pronounced under high voltage.

Onboard chargers (OBC) are undergoing technological innovation. Traditional designs based on discrete devices are nearing their limits in terms of improving power density and reducing size, making new power modular solutions increasingly attractive. Compact SiC modules have become a new choice for high-power-density onboard chargers. For example, simulation results of ROHM's HSDIP20 module in an 11kW bidirectional AC/DC conversion stage show efficiency接近 99% under conditions of 48kHz switching frequency and forced air cooling.

Renewable Energy Field
In the renewable energy field, SiC devices are mainly used in photovoltaic inverters, wind power converters, and energy storage systems. Silicon carbide MOSFETs can improve the conversion efficiency of inverters and rectifiers, further promoting the use of clean energy.

In photovoltaic power generation applications, SiC devices can improve inverter conversion efficiency, reduce energy loss, and simultaneously shrink system size, lowering installation and maintenance costs. Particularly in large-scale photovoltaic power plants, SiC solutions can significantly enhance overall system efficiency, providing better economic returns for investors.

Wind power generation applications also benefit from SiC technology. Wind power environments are harsh, requiring high reliability and temperature adaptability from power devices. The high-temperature characteristics and high reliability of SiC devices make them well-suited for wind power applications, reducing maintenance needs and improving system availability.

Industrial Electronics and Power Transmission
Fields such as industrial automation and power transmission also have special demands for high-voltage MOSFETs. The 1700V silicon carbide MOSFET can withstand high voltage, high current, and operate stably at high frequencies, meeting the stringent requirements of various industrial conditions.

In the industrial motor drive sector, SiC devices enable higher-precision motor control while improving system efficiency. This is particularly important for energy-intensive industrial sectors, as it can significantly reduce operating costs and enhance competitiveness.

In power transmission, SiC devices can be used in high-voltage direct current transmission (HVDC) and flexible AC transmission systems (FACTS), improving transmission efficiency and control accuracy. With increasing demands for grid interconnection and renewable energy integration, the application prospects for SiC in power transmission are broad.

Emerging Application Fields
Beyond traditional application fields, SiC also demonstrates significant potential in several emerging areas:

• AI Computing and Data Centers: As artificial intelligence computing brings higher thermal loads, existing heat dissipation materials struggle to meet demand. SiC heat dissipation substrates have emerged as a solution. TSMC plans to apply 12-inch single-crystal silicon carbide to heat dissipation substrates, replacing traditional alumina, sapphire substrates, or ceramic substrates.

• RF and Microwave Applications: In the RF field, the domestic GaN device market reached 10.8 billion yuan in 2024, a year-on-year increase of 4.5%. The penetration rate of domestic GaN HEMT devices in 5G base stations exceeds 50%, and breakthroughs in heterogeneous integration technology (e.g., GaN-on-SiC) lay the foundation for 6G research and development.

• Optoelectronics Field: The optoelectronic LED market remained stable at 78.4 billion yuan, with a year-on-year growth of 0.2%, but significant structural changes occurred. Automotive LEDs (e.g., smart headlights, ambient lights), Mini LED backlights, and non-visual applications (e.g., UV sterilization, plant lighting) experienced substantial growth.

• Aerospace and Defense: In aerospace and defense, the high-temperature characteristics of silicon carbide provide essential support for military equipment and spacecraft. SiC devices can withstand extreme environmental conditions, meeting the high-reliability requirements of aerospace applications.

Industry Chain and Competitive Landscape
The global SiC industry chain has初步 formed, encompassing a complete ecosystem from material preparation and device design and manufacturing to application systems. However, there are significant differences in the competitive landscape and development levels across various segments of the industry chain.

Global Industry Chain Layout
Globally, the SiC industry exhibits an oligopolistic structure. According to Yole data, industry leaders occupy over 60% of the global SiC material market share. Major players in the global SiC epitaxial wafer market include TYSiC, II-VI Advanced Materials (Ascatron), BASiC Semiconductor, Showa Denko K.K. (Resonac Holdings), Wolfspeed (Cree), and ROHM (Sicrystal).

Although China's SiC industry started later, it has developed rapidly. China has初步 built a complete industrial ecosystem for compound semiconductors like silicon carbide and gallium nitride, spanning materials, devices, and applications. The industry scale continues to expand, technological innovation capabilities have significantly improved, and application scenarios are continually broadening.

Table: Layout of Major Global SiC Enterprises

Development of China's Industry Chain
China's SiC industry chain has basically taken shape and has made significant progress in various segments:

In the upstream material field, domestic silicon carbide substrate production capacity surged in 2024, prices dropped significantly, the yield of 6-inch substrates continued to improve, 8-inch substrates entered mass production, and 12-inch substrates were successfully developed. This indicates that China's silicon carbide substrate technology has ascend to global first tier.

In the downstream application field, as the world's largest new energy vehicle market, China provides a broad application scenario for SiC devices. In 2024, the new energy vehicle market contributed over 12 billion yuan, making it the largest growth driver for SiC. The consumer electronics market followed with a scale of 2.1 billion yuan, and GaN devices have become standard in the fast-charging field.

Challenges and Opportunities Analysis
Industry Development Challenges
Although the SiC market has broad prospects, industry development still faces multiple challenges:

• Cost Pressure: Although production processes are maturing and costs are decreasing, the price of silicon carbide MOSFETs remains higher than traditional silicon MOSFETs, which limits their widespread application to some extent. In 2025, the average unit price of global 6-inch SiC wafers fell by over 30% year-on-year, and price competition is fierce.

• Technical Challenges: Silicon carbide substrates still face challenges in defect control, and gallium nitride reliability standards need further improvement. SiC hardness is comparable to diamond, making cutting technology difficult. Poor cutting technology can result in wavy surfaces on silicon carbide, rendering it unsuitable for advanced packaging.

• Talent Shortage: China's compound semiconductor industry needs to continue tackling issues like high-end talent reserves in the coming years. A shortage of professionals is a significant factor constraining industry development.

• International Competition: The global SiC market is dominated by international giants, and Chinese companies face intense international competition. The global CVD silicon carbide components market is led by international giants like Tokai Carbon, Sgl Carbon, and Toyo Tanso.

• Supply Chain Risks: Geopolitical changes and supply chain restructuring pose challenges. The instability of the global semiconductor industry supply chain brings uncertainty to the development of China's SiC industry.

Industry Development Opportunities
Despite the challenges, the SiC industry is full of development opportunities:

• Growing Market Demand: The global carbon neutrality trend is driving the rapid development of the new energy market, leading to sustained growth in demand for SiC devices. It is predicted that the global SiC power device market for new energy vehicles will reach $3.005 billion in 2025.

• Policy Support: China's "Two New and One Heavy" and "Dual Carbon" strategies continue to empower the compound semiconductor industry. A series of government policies have accelerated the localization of semiconductor equipment.

• Technological Advancements: Technological progress is driving industry development. China has built a complete industrial ecosystem for compound semiconductors like silicon carbide and gallium nitride, spanning materials, devices, and applications.

• Emerging Application Fields: Emerging application fields continue to emerge. New scenarios like AI computing, drones, and low-orbit satellite communication are beginning to adopt GaN RF solutions, which may become new growth points in the future.

• Domestic Substitution Opportunities: Domestic substitution provides opportunities for local enterprises. The stable demand in security and aerospace markets offers space for domestic substitution.

Silicon carbide (SiC), as a representative of the third-generation semiconductor materials, is playing an increasingly important role in global energy transformation and industrial change. The global SiC market is in a phase of rapid development, expected to reach a size of $10.3 billion by 2030. Technological progress is significant, with the yield of 6-inch SiC substrates continuously improving, 8-inch substrates entering mass production, and 12-inch substrates successfully developed.

China's SiC industry has made significant progress, achieving breakthroughs in material preparation, device design, and application innovation. China has built a complete industrial ecosystem for compound semiconductors like silicon carbide and gallium nitride, spanning materials, devices, and applications. In the future, driven by market demand, policy support, and technological innovation, China's SiC industry is expected to achieve faster development, gradually transitioning from a "follower" to a "leader." However, the industry still faces challenges such as cost, technology, talent, and international competition. Joint efforts from the government, enterprises, research institutions, and users are needed to strengthen collaborative innovation, improve the industrial ecosystem, promote the healthy development of the SiC industry, and provide support for global carbon neutrality goals and digital economic development.